Finite element analysis for the prediction and optimization of residual stresses caused by laser enamellingNISAR, A; SCHMIDT, M. J. J; SHEIKH, M. A et al.Proceedings of the Institution of Mechanical Engineers. Part B. Journal of engineering manufacture. 2003, Vol 217, Num 8, pp 1085-1099, issn 0954-4054, 15 p.Article

Three-dimensional transient finite element analysis of the laser enamelling process and moving heat source and phase change considerationsNISAR, A; SCHMIDT, M. J. J; SHEIKH, M. A et al.Proceedings of the Institution of Mechanical Engineers. Part B. Journal of engineering manufacture. 2003, Vol 217, Num 6, pp 753-764, issn 0954-4054, 12 p.Article

OCVD carrier lifetime in P⁺NN⁺ diode structures with axial carrier lifetime gradientBENDA, V; CERNIK, M; PAPEZ, V et al.Microelectronics journal. 2006, Vol 37, Num 3, pp 217-222, issn 0959-8324, 6 p.Conference Paper

Experimental and numerical study of the recovery softness and overvoltage dependence on p-i-n diode designCOVA, P; MENOZZI, R; PORTESINE, M et al.Microelectronics journal. 2006, Vol 37, Num 5, pp 409-416, issn 0959-8324, 8 p.Article

Experimental Study on Power Consumption in Lifetime Engineered Power DiodesDALIENTO, Santolo; MELE, Luigi; SPIRITO, Paolo et al.I.E.E.E. transactions on electron devices. 2009, Vol 56, Num 11, pp 2819-2824, issn 0018-9383, 6 p.Article

Ablation of electrode surfaces in high power diodesSINCERNY, P; GILMAN, C; STRINGFIELD, R et al.Journal of applied physics. 1983, Vol 54, Num 12, pp 7170-7175, issn 0021-8979Article

A new device ― a power semiconductor diode with an integrated thermal sensorMANDUTEANU, G. V.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 5, pp 700-703, issn 0018-9383Article

Forward current-voltage characteristics of gallium arsenide power diodes at high current densitiesDELIMOVA, L. A; ZHILYAEV, YU. V; KACHOROVSKY, Y. YU et al.Solid-state electronics. 1988, Vol 31, Num 6, pp 1101-1104, issn 0038-1101Article

Cathode-Side Current Filaments in High-Voltage Power Diodes Beyond the SOA LimitBABURSKE, Roman; NIEDERNOSTHEIDE, Franz-Josef; LUTZ, Josef et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 7, pp 2308-2317, issn 0018-9383, 10 p.Article

New Investigation Possibilities on Forward Biased Power Devices Using Cross SectionsKOCINIEWSKI, T; MOUSSODJI, J; KHATIR, Z et al.IEEE electron device letters. 2012, Vol 33, Num 4, pp 576-578, issn 0741-3106, 3 p.Article

Catastrophic optical degradation of the output facet of high-power single-transverse-mode diode lasers. 1. Physical modelMIFTAKHUTDINOV, D. R; BOGATOV, A. P; DRAKIN, A. E et al.Quantum electronics (Woodbury). 2010, Vol 40, Num 7, pp 583-588, issn 1063-7818, 6 p.Article

Surface treatment of aluminum matrix composites using a high power diode laserRAMS, J; PARDO, A; URENA, A et al.Surface & coatings technology. 2007, Vol 202, Num 4-7, pp 1199-1203, issn 0257-8972, 5 p.Conference Paper

Modelling of diode forward recovery characteristics using a modified charge-control equationTSENG, K. J.International journal of electronics. 1998, Vol 84, Num 5, pp 437-444, issn 0020-7217Article

DIODES DE PUISSANCE A BASE D'HETEROJONCTIONS AVEC UN DOMAINE DE BASE MODULE PAR LE RAYONNEMENT DE RECOMBINAISONKOROL'KOV VI; ROMANOVA EP; YUFEREV VS et al.1980; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1980; VOL. 14; NO 9; PP. 1689-1693; BIBL. 3 REF.Article

INDICES TECHNICO-ECONOMIQUES DES SYSTEMES DE REFROIDISSEMENT DES SEMICONDUCTEURS A STRUCTURE P-N DE GRAND DIAMETREKHAZEN MM; IVANOV VI; SEMENOV GM et al.1977; ELEKTROTEKHNIKA; S.S.S.R.; DA. 1977; NO 12; PP. 25-29; BIBL. 9 REF.Article

NUMERICAL SOLUTIONS FOR SURFACE ELECTRIC FIELD DISTRIBUTIONS IN AVALANCHING P-I-N POWER DIODESPATHAK VK; GOWAR J.1983; IEE PROCEEDINGS. PART I. SOLID-STATE AND ELECTRON DEVICES; ISSN 0143-7100; GBR; DA. 1983; VOL. 130; NO 1; PP. 17-23; BIBL. 7 REF.Article

DIE ROLLE VON VERTEILTON PARAMETERN BEI DER ANALYSE TECHNOLOGISCHER PROZESSE DER HALBLEITERTECHNIK = LE ROLE DES PARAMETRES DISTRIBUES DANS L'ANALYSE DES PROCESSUS TECHNOLOGIQUES DE LA TECHNIQUE DES SEMI-CONDUCTEURSHEINZE W; LUDWIG J.1978; NACHR.-TECH., ELEKTRON.; DDR; DA. 1978; VOL. 28; NO 5; PP. 184-188; ABS. RUS/ENG; BIBL. 9 REF.Article

ETUDE DE LA STRUCTURE DIODE A BASE D'ARSENIURE DE GALLIUM FAIBLEMENT DOPEASHKINAZI GA; ZOLOTAREVSKIJ L YA; KIVI UM et al.1978; ZH. TEKH. FIZ.; SUN; DA. 1978; VOL. 48; NO 11; PP. 2389-2394; BIBL. 6 REF.Article

Fast recovery diodes - : Reverse recovery behaviour and dynamic avalancheLUTZ, Josef.International conference on microelectronics. 2004, isbn 0-7803-8166-1, 2Vol, vol 1, 11-16Conference Paper

COMPARAISON DES PARAMETRES, DES THYRISTORS ET DES DIODES DE PUISSANCE, DOPES A L'OR ET AU PLATINEASINA SS; DUMANEVICH AN; RUKHAMKIN VM et al.1979; RADIOTEKH. E EHLEKTRON.; SUN; DA. 1979; VOL. 24; NO 5; PP. 1050-1054; BIBL. 5 REF.Article

Irradiation of bypass diodes up to 2.2E14 neutron/cm2 and 1.3 kGy for the FAIR projectFLOCH, E; MUSTAFIN, E; KANTSYREV, A et al.IEEE transactions on applied superconductivity. 2007, Vol 17, Num 2, pp 2462-2465, issn 1051-8223, 4 p., 2Conference Paper

High-power P-i-N diode with local lifetime control using palladium diffusion controlled by radiation defectsVOBECKY, Jan; HAZDRA, Pavel.IEEE electron device letters. 2005, Vol 26, Num 12, pp 873-875, issn 0741-3106, 3 p.Article

Characterization of recombination centers in Si epilayers after He implantation by direct measurement of local lifetime distribution with the AC lifetime profiling techniqueSPIRITO, Paolo; DALIENTO, Santolo; SANSEVERINO, Annunziata et al.IEEE electron device letters. 2004, Vol 25, Num 9, pp 602-604, issn 0741-3106, 3 p.Article

Different types of avalanche-induced moving current filaments under the influence of doping inhomogeneitiesMILADY, S; SILBER, D; NIEDERNOSTHEIDE, F.-J et al.Microelectronics journal. 2008, Vol 39, Num 6, pp 857-867, issn 0959-8324, 11 p.Conference Paper

Physics-based modeling and characterization for silicon carbide power diodesMCNUTT, Ty R; HEFNER, Alien R; MANTOOTH, H. Alan et al.Solid-state electronics. 2006, Vol 50, Num 3, pp 388-398, issn 0038-1101, 11 p.Article